new product v60100p vishay general semiconductor document number: 88978 revision: 26-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.456 v at i f = 10 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? low thermal resistance ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency inverters, switching power supplies, freewheeling diodes, or-ing diode, dc-to-dc converters and reverse battery protection. mechanical data case: to-247ad (to-3p) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 30 a v rrm 100 v i fsm 350 a v f at i f = 30 a 0.657 v t j max. 150 c pin 1 pin 3 case pin 2 to-247ad (to-3p) 1 2 3 tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v60100p unit maximum repetitive peak reverse voltage v rrm 100 v maximum average forward rectified current (fig. 1) per device per diode i f(av) 60 30 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 350 a peak repetitive reverse current per diode at t p = 2 s, 1 khz i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c
new product v60100p vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88978 revision: 26-may-08 2 notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t j = 25 c v br 100 (minimum) - v instantaneous forward voltage per diode (1) i f = 10 a i f = 15 a i f = 30 a t j = 25 c v f 0.518 0.576 0.730 - - 0.79 v i f = 10 a i f = 15 a i f = 30 a t j = 125 c 0.456 0.531 0.657 - - 0.70 reverse current per diode (2) v r = 80 v t j = 25 c t j = 125 c i r 34.6 9.5 - - a ma v r = 100 v t j = 25 c t j = 125 c 82.0 19.2 800 45 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v60100p unit typical thermal resistance per diode r jc 1.5 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode v60100p-e3/45 6.12 45 30/tube tube figure 1. forward current derating curve 50 60 40 30 20 10 0 025 50 75 100 125 150 175 case temperat u re (c) a v erage for w ard c u rrent (a) resisti v e or ind u cti v e load 70 figure 2. forward power loss characteristics per diode d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 0 0 5 10 15 20 25 5 101520253035 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = t p /t t p t
new product v60100p vishay general semiconductor document number: 88978 revision: 26-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 figure 3. maximum non-repetitive peak forward surge current per diode figure 4. typical instantaneous forw ard characteristics per diode figure 5. typical reverse characteristics per diode nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 400 300 200 100 1 10 100 t j = t j max. 8 .3 ms single half sine- w a v e instantaneo u s for w ard v oltage ( v ) 0 0.2 0.3 0.5 0.7 0.9 0.1 0.4 0.6 0. 8 1.0 100 10 1 0.1 t j = 150 c t j = 125 c t j = 25 c instantaneo u s for w ard c u rrent (a) 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) t j = 150 c t j = 125 c t j = 25 c figure 6. typical juncti on capacitance per diode figure 7. typical transient thermal impedance per diode 100 1000 10 000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p t - p u lse d u ration (s) transient thermal impedance (c/ w ) 10 1 0.1 0.1 1 10 100 0.01 j u nction to case
new product v60100p vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88978 revision: 26-may-08 4 package outline dimensions in inches (millimeters) pi n 1 pi n 3 case pi n 2 to-247ad (to-3p) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 ( 8 .2) 0.313 (7.9) 0.142 (3.6) 0.13 8 (3.5) 0.170 (4.3) 0.0 8 6 (2.1 8 ) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.04 8 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0. 8 40 (21.3) 0. 8 20 (20. 8 ) 1 2 3 0.07 8 (1.9 8 ) ref. 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1 ref. both sides 0.030 (0.76) 0.020 (0.51) 0.11 8 (3.0) 0.10 8 (2.7)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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